Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Abstract The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material...

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Autori principali:	Amine Slassi, Linda‐Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2023-04-01
Serie:	Advanced Electronic Materials
Soggetti:	devices DFT electrical characteristics Ginestra materials ovonic threshold switching
Accesso online:	https://doi.org/10.1002/aelm.202201224
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