Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
Abstract The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin- $$\frac{3}{2}$$ 3 2 electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacanc...
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| Principais autores: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Portfolio
2025-04-01
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| coleção: | npj Quantum Information |
| Acesso em linha: | https://doi.org/10.1038/s41534-025-01011-2 |
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