High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for d...

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Autores principales:	Bingcheng Da, Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He, Houqiang Fu
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IOP Publishing 2024-01-01
Colección:	Applied Physics Express
Materias:	AlN metal-semiconductor field-effect transistors temperature-depedndent measurements
Acceso en línea:	https://doi.org/10.35848/1882-0786/ad85c0
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