Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of...
Kaydedildi:
| Asıl Yazarlar: | , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IOP Publishing
2023-01-01
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| Seri Bilgileri: | Materials Research Express |
| Konular: | |
| Online Erişim: | https://doi.org/10.1088/2053-1591/ad0935 |
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