Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of...
Збережено в:
| Автори: | , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IOP Publishing
2023-01-01
|
| Серія: | Materials Research Express |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1088/2053-1591/ad0935 |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|