Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs h...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Ho Sung Kim, G. H. Ryu, S. Y. Ahn, H. Y. Ryu, W. J. Choi
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	IEEE 2019-01-01
Edice:	IEEE Photonics Journal
Témata:	Quantum dot infrared photodetector microcavity metal wafer bonding epitaxial lift-off.
On-line přístup:	https://ieeexplore.ieee.org/document/8606424/
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!