Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs h...

Fuld beskrivelse

Bibliografiske detaljer

Principais autores:	Ho Sung Kim, G. H. Ryu, S. Y. Ahn, H. Y. Ryu, W. J. Choi
Format:	Artigo
Sprog:	Inglês
Udgivet:	IEEE 2019-01-01
Serier:	IEEE Photonics Journal
Fag:	Quantum dot infrared photodetector microcavity metal wafer bonding epitaxial lift-off.
Online adgang:	https://ieeexplore.ieee.org/document/8606424/
Tags:	Tilføj Tag Ingen Tags, Vær først til at tagge denne postø!