Modeling of Phototransistors Based on Quasi-Two-Dimensional Transition Metal Dichalcogenides

This study introduces a comprehensive physical modeling framework for phototransistors based on quasi-two-dimensional transition metal dichalcogenides, with a particular emphasis on MoS₂. By integrating electromagnetic simulations of optical absorption with semiconductor transport calcula...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Sergey D. Lavrov, Andrey A. Guskov
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2025-06-01
Цуврал:	Modelling
Нөхцлүүд:	phototransistor modeling transition metal dichalcogenides MoS<sub>2</sub> photodetector quasi-two-dimensional materials optoelectronics photocurrent analysis
Онлайн хандалт:	https://www.mdpi.com/2673-3951/6/2/47
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!