Modeling of Phototransistors Based on Quasi-Two-Dimensional Transition Metal Dichalcogenides

This study introduces a comprehensive physical modeling framework for phototransistors based on quasi-two-dimensional transition metal dichalcogenides, with a particular emphasis on MoS₂. By integrating electromagnetic simulations of optical absorption with semiconductor transport calcula...

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Váldodahkkit:	Sergey D. Lavrov, Andrey A. Guskov
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2025-06-01
Ráidu:	Modelling
Fáttát:	phototransistor modeling transition metal dichalcogenides MoS<sub>2</sub> photodetector quasi-two-dimensional materials optoelectronics photocurrent analysis
Liŋkkat:	https://www.mdpi.com/2673-3951/6/2/47
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