Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals

Abstract Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through t...

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Váldodahkkit:	Hongjoo Shin, Doosun Hong, Hyunjin Cho, Hanhwi Jang, Geon Yeong Kim, Kyeong Min Song, Min-Jae Choi, Donghun Kim, Yeon Sik Jung
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	Nature Portfolio 2024-09-01
Ráidu:	Nature Communications
Liŋkkat:	https://doi.org/10.1038/s41467-024-52535-8
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