Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals
Abstract Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through t...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , , , , , , |
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| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
Nature Portfolio
2024-09-01
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| মালা: | Nature Communications |
| অনলাইন ব্যবহার করুন: | https://doi.org/10.1038/s41467-024-52535-8 |
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