Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristic...

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Principais autores:	Ye Shen, Xuan Fang, Xiang Ding, Haiyan Xiao, Xia Xiang, Guixia Yang, Ming Jiang, Xiaotao Zu, Liang Qiao
格式:	Artigo
語言:	Inglês
出版:	MDPI AG 2020-02-01
叢編:	Nanomaterials
主題:	gaas gamma radiation structural features photoelectric property
在線閱讀:	https://www.mdpi.com/2079-4991/10/2/340
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