Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristic...

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主要な著者:	Ye Shen, Xuan Fang, Xiang Ding, Haiyan Xiao, Xia Xiang, Guixia Yang, Ming Jiang, Xiaotao Zu, Liang Qiao
フォーマット:	Artigo
言語:	Inglês
出版事項:	MDPI AG 2020-02-01
シリーズ:	Nanomaterials
主題:	gaas gamma radiation structural features photoelectric property
オンライン･アクセス:	https://www.mdpi.com/2079-4991/10/2/340
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