Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN

The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentional...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Peng Wu, Jianping Liu, Fangzhi Li, Xiaoyu Ren, Aiqin Tian, Wei Zhou, Fan Zhang, Xuan Li, Bolin Zhou, Masao Ikeda, Hui Yang
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	MDPI AG 2024-04-01
Цуврал:	Nanomaterials
Нөхцлүүд:	GaN step bunching step meandering Ehrlich–Schwoebel (E-S) barrier miscut MOCVD
Онлайн хандалт:	https://www.mdpi.com/2079-4991/14/9/748
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!