The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor
In this work, the effect of gate voltage sampling interval (<inline-formula> <tex-math notation="LaTeX">$\Delta \text{V}_{\mathrm {gs}}$ </tex-math></inline-formula>) and various difference approximation methods on extracting the value of subthreshold swing (SS) have been investigated in detail for...
Gardado en:
| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/9432860/ |
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