Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of s...
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| Hlavní autoři: | , , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2022-10-01
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| Edice: | Micromachines |
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| On-line přístup: | https://www.mdpi.com/2072-666X/13/10/1691 |
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