High-Gain Transimpedance Amplifier for Flexible Radiation Dosimetry Using InGaZnO TFTs
This paper presents a novel high-gain transimpedance amplifier for flexible radiation sensing systems that can be used as large-area dosimeters. The circuit is implemented with indium-gallium-zinc-oxide thin-film-transistors and uses two stages for the amplification of the sensor signal (current). T...
Збережено в:
| Автори: | , , , , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IEEE
2018-01-01
|
| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/8394619/ |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
