Raman Study of Polycrystalline Si₃N₄ Irradiated with Swift Heavy Ions

A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10¹¹ cm⁻² ÷ 4.87 × 10¹³ cm⁻²) and Bi (710 MeV, 1 × 10¹¹ cm⁻² ÷ 1...

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Principais autores:	Ainash Zhumazhanova, Alisher Mutali, Anel Ibrayeva, Vladimir Skuratov, Alma Dauletbekova, Ekaterina Korneeva, Abdirash Akilbekov, Maxim Zdorovets
格式:	Artigo
语言:	Inglês
出版:	MDPI AG 2021-10-01
丛编:	Crystals
主题:	silicon nitride swift heavy ions Raman spectra mechanical stresses piezospectroscopy
在线阅读:	https://www.mdpi.com/2073-4352/11/11/1313
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