Raman Study of Polycrystalline Si<sub>3</sub>N<sub>4</sub> Irradiated with Swift Heavy Ions
A depth-resolved Raman spectroscopy technique was used to study the residual stress profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 4.87 × 10<sup>13</sup> cm<sup>−2</sup>) and Bi (710 MeV, 1 × 10<sup>11</sup> cm<sup>−2</sup> ÷ 1...
Gorde:
| Egile Nagusiak: | , , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2021-10-01
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| Saila: | Crystals |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2073-4352/11/11/1313 |
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