Self‐Powered AlGaN/GaN Photovoltaic‐Integrated UV Photodetector: Rapid Response with Persistent Photoconductivity Suppression

Abstract Conventional GaN‐based UV photodetectors (PDs) suffer from prolonged turn‐off dynamics and high residual off‐state currents, severely limiting their use in high‐speed optoelectronic applications. In this work, a self‐powered, on‐chip AlGaN/GaN photovoltaic‐photodetector integrated configura...

Cijeli opis

Bibliografski detalji

Glavni autori:	Yuhan Pu, Yung C. Liang
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley-VCH 2025-09-01
Serija:	Advanced Electronic Materials
Teme:	AlGaN/GaN optoelectronic integration persistent photoconductivity self‐powered UV photodetectors UV imaging
Online pristup:	https://doi.org/10.1002/aelm.202500216
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!