Electron Spin–Lattice Relaxation of Substitutional Nitrogen in Silicon: The Role of Disorder and Motional Effects
In a previous investigation, the authors proposed nitrogen as a possible candidate for exploiting the donor spin in silicon quantum devices. This system is characterized by a ground state deeper than the other group V impurities in silicon, offering less stringent requirements on the device temperat...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2023-12-01
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| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/14/1/21 |
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