A Kinetic Pathway to Orthorhombic HfZrO<sub/><sub/><sub/>
To improve the crystallinity and phase composition of the Hf0.5Zr0.5O2 films, the effects of annealing temperature on metal-ferroelectric-metal devices are studied by electrical measurements, nanobeam electron diffraction (NBD), and TEM. Forming gas annealing (FGA) at 400°C partially crystall...
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| Glavni autori: | , , , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
IEEE
2023-01-01
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| Serija: | IEEE Journal of the Electron Devices Society |
| Teme: | |
| Online pristup: | https://ieeexplore.ieee.org/document/10329931/ |
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