Sb-Doped Substrates for Low-Noise Silicon Photomultipliers

Suppressing dark noise in silicon photomultipliers (SiPMs) remains highly challenging because Geiger-mode operation inherently leads to high dark count rates (DCR). Although epitaxial silicon layers grown on heavily doped substrates are widely employed, high-temperature epitaxial processing often in...

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Bibliographic Details

Main Authors:	Shifeng Zhang, Jiangteng Xia, Yanling Ren, Fudexuan Huang, Jiacheng Lai, Ming Zhang, Anqi Hu, Xia Guo
Format:	Artigo
Language:	Inglês
Published:	IEEE 2026-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Silicon photomultiplier (SiPM) dark count rate (DCR) afterpulsing (AP) photon detection efficiency (PDE) single-photon timing resolution (SPTR)
Online Access:	https://ieeexplore.ieee.org/document/11371612/
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