Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering
GaN-on-diamond wafers are investigated to overcome the heat accumulation issues in GaN-based electronic devices. Until now, growing the high-quality GaN film on the diamond for device manufacture is still a great challenge. In this study, a new strategy of high-quality GaN on (111) diamond was propo...
Збережено в:
| Автори: | , , , , , , , , |
|---|---|
| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Elsevier
2023-11-01
|
| Серія: | Materials & Design |
| Предмети: | |
| Онлайн доступ: | http://www.sciencedirect.com/science/article/pii/S0264127523008596 |
| Теги: |
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
