Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using SiO2, HfO2, and Al2O3 as gate dielectrics, three...

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Detalhes bibliográficos

Principais autores:	Hyojung Kim, Soonkon Kim, Jongmin Yoo, Changyong Oh, Bosung Kim, Hyuncheol Hwang, Jungmin Park, Pyungho Choi, Jangkun Song, Kiju Im, Byoungdeog Choi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	AIP Publishing LLC 2021-03-01
coleção:	AIP Advances
Acesso em linha:	http://dx.doi.org/10.1063/5.0035379
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