Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS<sub>2</sub> Layer
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp<sup>2</sup>-bonded two-dimensional (2D) MoS<sub>2</sub> buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposi...
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| Автори: | , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2021-05-01
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| Серія: | Nanomaterials |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2079-4991/11/6/1406 |
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