Enhanced Polarization Switching in HfZrO<sub>2</sub> MFS FeFET Using WO<sub>x</sub> Interlayer
We demonstrate that the memory window (MW) of HfZrO2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with an InZnO channel/HZO/W gate stack can be noticeably widened to over 2 V by introducing an amorphous WO2.7 interlayer (IL) into the gate interface. Although an orthorhombic (o-) phase...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
IEEE
2026-01-01
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| Serier: | IEEE Journal of the Electron Devices Society |
| Fag: | |
| Online adgang: | https://ieeexplore.ieee.org/document/11527210/ |
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