Harnessing orbital Hall effect in spin-orbit torque MRAM
Abstract Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-densi...
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Portfolio
2025-01-01
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| Serie: | Nature Communications |
| Accesso online: | https://doi.org/10.1038/s41467-024-55437-x |
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