Harnessing orbital Hall effect in spin-orbit torque MRAM

Abstract Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-densi...

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Bibliografiske detaljer

Principais autores:	Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Arnab Bose, Iryna Kononenko, Sylvain Martin, Perrine Usé, Gerhard Jakob, Marc Drouard, Mathias Kläui
Format:	Artigo
Sprog:	Inglês
Udgivet:	Nature Portfolio 2025-01-01
Serier:	Nature Communications
Online adgang:	https://doi.org/10.1038/s41467-024-55437-x
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