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Uranium Doped Gallium Nitride Epitaxial Thin Films

ABSTRACT Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid‐state lighting and high‐power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodi...

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Autori principali: J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May
Natura: Artigo
Lingua:Inglês
Pubblicazione: Wiley-VCH 2026-06-01
Serie:Advanced Electronic Materials
Soggetti:
actinides
doping
epitaxy
nitrides
thin film
Accesso online:https://doi.org/10.1002/aelm.202500730
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