Uranium Doped Gallium Nitride Epitaxial Thin Films
ABSTRACT Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid‐state lighting and high‐power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodi...
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| Автори: | , , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2026-06-01
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| Серія: | Advanced Electronic Materials |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/aelm.202500730 |
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