Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios

Abstract As the number of word‐line layers of vertical flash memory increases, it is difficult to develop high aspect ratio contact further. NAND cell scaling can consistently reduce with advanced fabrication development, but the reliability deterioration becomes challenge as the cell‐to‐cell distan...

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Detalhes bibliográficos

Principais autores:	Sehyeon Choi, Yunseo Lim, Sejin Kim, San Park, Boncheol Ku, Hyungjun Kim, Jaehyun Yang, Bio Kim, Youngseon Son, Hanmei Choi, Changhwan Choi
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2025-09-01
coleção:	Advanced Electronic Materials
Assuntos:	charge trap layer deep level trap flash memory hydrogen passivation
Acesso em linha:	https://doi.org/10.1002/aelm.202400960
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