Defect‐Free Sb‐Doping in Bi2O2Se Achieves Two‐Order‐of‐Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility

Abstract Doping generally introduces performance trade‐offs in materials, yet overcoming this fundamental limitation remains crucial for advancing materials research. Bi2O2Se exhibits exceptional electronic properties as a promising semiconductor, yet its nonlinear optical response under low excitat...

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Principais autores:	Qingling Tang, Zhongben Pan, Hongwei Chu, Han Pan, Dechun Li
Format:	Artigo
Jezik:	Inglês
Izdano:	Wiley 2026-02-01
Serija:	Advanced Science
Teme:	carrier mobility first principles calculation low saturation intensity Sb‐doped Bi2O2Se ultrafast pulse generation
Online dostop:	https://doi.org/10.1002/advs.202518454
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