Defect‐Free Sb‐Doping in Bi2O2Se Achieves Two‐Order‐of‐Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility

Abstract Doping generally introduces performance trade‐offs in materials, yet overcoming this fundamental limitation remains crucial for advancing materials research. Bi2O2Se exhibits exceptional electronic properties as a promising semiconductor, yet its nonlinear optical response under low excitat...

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Principais autores:	Qingling Tang, Zhongben Pan, Hongwei Chu, Han Pan, Dechun Li
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Wiley 2026-02-01
סדרה:	Advanced Science
נושאים:	carrier mobility first principles calculation low saturation intensity Sb‐doped Bi2O2Se ultrafast pulse generation
גישה מקוונת:	https://doi.org/10.1002/advs.202518454
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!