Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral gro...

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Hlavní autoři:	Chang-Hun Song, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong-Ho Park, Donghyun Kim, Keunman Song, Dae-Hong Ko, Chan-Soo Shin
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-12-01
Edice:	Crystals
Témata:	MOCVD InAs nanowire vapor–solid method reverse tapering
On-line přístup:	https://www.mdpi.com/2073-4352/12/12/1846
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