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Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal–organic...

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Principais autores: Ivan Melnichenko, Eduard Moiseev, Natalia Kryzhanovskaya, Ivan Makhov, Alexey Nadtochiy, Nikolay Kalyuznyy, Valeriy Kondratev, Alexey Zhukov
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-11-01
coleção:Nanomaterials
Assuntos:
III–V nanostructures
InAsP/InP
silicon photonics
photoluminescence
Acesso em linha:https://www.mdpi.com/2079-4991/12/23/4213
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