Unveiling the growth mode diagram of GaSe on sapphire
Abstract The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-in...
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| Principais autores: | , , , , , , , , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Portfolio
2025-12-01
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| Serier: | Communications Materials |
| Online adgang: | https://doi.org/10.1038/s43246-025-01005-9 |
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