Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

The charge deep-level transient spectroscopy (Q-DLTS) is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC –...

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Bibliografische Detailangaben

Hauptverfasser:	I. I. Kurkina, I. V. Antonova, A. A. Shklyaev, S. A. Smagulova, M. Ichikawa
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	AIP Publishing LLC 2012-09-01
Schriftenreihe:	AIP Advances
Online-Zugang:	http://dx.doi.org/10.1063/1.4748863
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