A method for monitoring junction temperature of IGBT module based on turn-off voltage

The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltage...

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Główni autorzy:	LAN Weiyin, CUI Wei, CHEN Wenxuan, ZOU Yingqiao, LI Jiacheng, GE Xinglai
Format:	Artigo
Język:	Chinês
Wydane:	Editorial Department of Electric Drive for Locomotives 2024-03-01
Seria:	机车电传动
Hasła przedmiotowe:	insulated gate bipolar transistor (IGBT) junction temperature monitoring deep neutral network (DNN) temperature-sensitive parameter turn-off voltage (TOV)
Dostęp online:	http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2024.02.016
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