A method for monitoring junction temperature of IGBT module based on turn-off voltage

The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltage...

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Detalhes bibliográficos

Principais autores:	LAN Weiyin, CUI Wei, CHEN Wenxuan, ZOU Yingqiao, LI Jiacheng, GE Xinglai
Formato:	Artigo
Idioma:	Chinês
Publicado em:	Editorial Department of Electric Drive for Locomotives 2024-03-01
Colecção:	机车电传动
Assuntos:	insulated gate bipolar transistor (IGBT) junction temperature monitoring deep neutral network (DNN) temperature-sensitive parameter turn-off voltage (TOV)
Acesso em linha:	http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2024.02.016
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