Influence of the rapid thermal treatment of the gate dielectric on the parameters of integrated circuits of time devices

Por V. A. Saladukha, V. A. Pilipenko, V. A. Gorushko
Publicado em 2020-05-01

Rapid thermal treatment robotics unit for creation of electronic equipment devices

Por V. A. Saladukha, V. A. Pilipenko, V. P. Yakovlev
Publicado em 2019-06-01

INFLUENCE OF TIME MODES OF THERMAL TREATMENT ON Pt-Si SYSTEM MICROSTRUCTURE

Por V. A. Saladukha, V. A. Pilipenko, F. F. Komarov, V. A. Gorushko
Publicado em 2020-03-01

The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters

Por V. A. Saladukha, V. A. Pilipenko, V. A. Gorushko, V. A. Philipenya
Publicado em 2019-06-01

Electron-microscope investigations of the Pt-Si system during its rapid thermal treatment

Por V. A. Saladukha, V. A. Pilipenko, F. F. Komarov, V. A. Gorushko
Publicado em 2020-05-01

MONITORING OF IC ENCAPSULATION PROCESS

Por V. A. Saladukha, V. S. Turtsevitch, J. A. Solovjov, I. I. Rubtsevitch, A. F. Kerentsev, A. A. Dovzhenko, I. V. Chirko
Publicado em 2015-03-01

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Por V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publicado em 2017-12-01