MATHEMATICAL MODELING OF A DISTANCE DEPENDENCE OF A SCANNING KELVIN PROBE LATERAL RESOLUTION

Por A. K. Tyavlovsky
Publicado em 2015-04-01

THE ANALYSIS OF DIELECTRICS' SURFACE POTENTIAL MEASURING TECHNIQUE BASED ON A CURRENT FEEDBACK SCHEME

Por A. K. Tyavlovsky, A. L. Zharin
Publicado em 2015-04-01

COMPENSATION OF MEASUREMENT ERRORS WHEN REDUCING LINEAR DIMENSIONS OF THE KELVIN PROBE

Por A. K. Tyavlovsky, A. L. Zharin
Publicado em 2015-03-01

METROLOGICAL PERFORMANCE MODELING OF PROBE ELECTROMETERS CAPACITIVE SENSORS

Por A. K. Tyavlovsky, O. K. Gusev, A. L. Zharin
Publicado em 2015-04-01

DIGITAL CONTACT POTENTIAL DIFFERENCE PROBE

Por K. U. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, A. L. Zharin
Publicado em 2016-09-01

Determination of Type and Concentration of Electrolyte Solution on the Basis of Analysis of Potentiodynamic Curves

Por R. I. Vorobey, O. K. Gusev, V. P. Kiryeenko, A. K. Tyavlovsky, K. L. Tyavlovsky, V. B. Yarzhembitsky
Publicado em 2003-04-01

Measuring transducers for optical diagnostic system with multifunctional unitary photovoltaic converters

Por R. I. Vorobei, O. K. Gusev, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, L. I. Shadurskaya
Publicado em 2018-09-01

KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING

Por R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky
Publicado em 2015-03-01

ANALYSIS OF SURFACE DEFECTS OF ALUMINUM AND ITS ALLOYS WITH A SCANNING KELVIN PROBE

Por A. K. Tyavlovsky, A. L. Zharin, O. K. Gusev, R. I. Varabei, N. I. Muhurov, G. V. Sharonov, K. U. Pantsialeyeu
Publicado em 2017-02-01

KELVIN PROBE’S STRAY CAPACITANCE AND NOISE SIMULATION

Por S. Danyluk, A. V. Dubanevich, O. K. Gusev, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, R. I. Vorobey, A. L. Zharin
Publicado em 2015-03-01

STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL

Por R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Publicado em 2015-03-01

STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL

Por R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Publicado em 2015-03-01

THE MULTIFUNCTION MEASURING CONVERTER FOR MONITORING OF LIQUID TECHNOLOGICAL MEDIA

Por R. I. Vorobey, O. K. Gusev, A. L. Zharin, Yu. G. Kuzminsky, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, S. V. Shilko
Publicado em 2015-04-01

Series of Photovoltaic Converters Based on Semiconductors with Intrinsic Photoconductivity

Por R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. U. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, L. I. Shadurskaya
Publicado em 2021-06-01

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

Por V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publicado em 2017-12-01