Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters

Por Ryoma Ishihara, Soobeom Lee, Yuichiro Ando, Ryo Ohshima, Minori Goto, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, Masashi Shiraishi
Publicado em 2019-12-01