Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Por Bak, Jun Yong, Kang, Youngho, Yang, Shinhyuk, Ryu, Ho-Jun, Hwang, Chi-Sun, Han, Seungwu, Yoon, Sung-Min
Publicado no Sci Rep (2015)