Application of synchrotron radiation to TXRF analysis of metal contamination on siliconwafer surfaces
Synchrotron Radiation based Total Reflection X-ray Fluorescence (TXRF) has been shown to meet the critical needs ofthe semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The current bestdetection limit achieved at the Stanford Synchrotron Radiation Lab...
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| Publicado no: | Superficies y vacío |
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| Principais autores: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94200904 |
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