Mobility extraction in ultra thin, body buried oxide and fully depleted silicon-on-insulator MOSFET
In this paper, we extract the mobility of ultra-thin, body buried oxide and fully depleted silicon-on-insulator MOSFET, for different front and back-gate configurations. The mobility values are found by using the Capacitance - Gate Voltage and Current - Gate Voltage characteristics. In addition, the...
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| Publicado no: | Avances en Ciencias e Ingenierías |
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| Principais autores: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Universidad San Francisco de Quito
2013
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=726180834013 |
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