MBE-growth and characterization of InxGa1-xAs/GaAs (x=0.15) superlattice
A qualified In0.15Ga0.85As/GaAs superlattice was grown on an n-type GaAs(100) substrate by molecular beam epitaxy(MBE). Analysis of this structure was first carried out by X-Ray diffraction (XRD) and this structure's the interface thicknesses, roughness and x concentration determined at nanoscale. S...
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| Publicado no: | Revista Mexicana de Física |
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| Principais autores: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Física A.C.
2008
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=57016053003 |
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