Photoluminescence Properties of Te Doped AlGaAsSb Alloys
A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys latticematched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employedto discuss the origin of the dominant transition and the influence of the presence of Al and...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2005
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46435615 |
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