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Early fault detection in SiC-MOSFET with application in boost converter
This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done...
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| Vydáno v: | Revista Facultad de Ingeniería Universidad de Antioquia |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Universidad de Antioquia
2018
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=43057399002 https://www.redalyc.org/journal/430/43057399002/ https://www.redalyc.org/journal/430/43057399002/html/ https://www.redalyc.org/journal/430/43057399002/43057399002.epub https://www.redalyc.org/journal/430/43057399002/movil |
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