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High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp(2)Mg flow rate reached a max...
Tallennettuna:
| Julkaisussa: | Nanomaterials (Basel) |
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| Päätekijät: | , , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI
2021
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8308141/ https://ncbi.nlm.nih.gov/pubmed/34361152 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11071766 |
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